Overview: The Gas Plasma Etcher is designed for etching and surface modification using reactive gas plasma, suitable for a variety of research and industrial applications.

Key Features:

• Versatile etching capabilities for organic thin films and surface cleaning.
• Adjustable RF power settings for precise control.
• Active fan cooling and integral vacuum pump switch for efficient operation.

Technical Specifications:

• capacity: 6 in diameter x 6.5 in length Pyrex chamber
• accuracy: Not specified
• precision: Not specified
• range: RF power settings (Low, Medium, High)
• speed: Minimum pump speed 23 L/min
• power: Maximum RF power of 45W
• dimensions: 11 in H x 18 in W x 9 in D

Applications: Ideal for research in etching organic thin films, nanoscale cleaning, and surface modification.