The Xactix E2, also known as the Xactix Xetch XeF2, is a dry vapor phase isotropic silicon etching system that operates at room temperature. It utilizes xenon difluoride (XeF2) gas, which provides extremely high selectivity of silicon to common masking materials such as photoresist, silicon dioxide (SiO2), silicon nitride (Si3N4), and aluminum. This system is particularly well-suited for Micro Electromechanical Systems (MEMS) applications, including the release of MEMS structures, due to its ability to etch silicon isotropically without the need for liquid chemicals. Beyond silicon, it can also etch other materials like molybdenum (Mo), germanium (Ge), niobium (Nb), polysilicon, titanium (Ti), and tungsten (W). The system can process small samples up to 150mm wafers, and its transparent chamber lid allows for real-time monitoring of the etching progress.

Faculty of Science
Research lab focused on advancing scientific knowledge and innovation.
The Xactix E2, also known as the Xactix Xetch XeF2, is a dry vapor phase isotropic silicon etching system that operates at room temperature. It utilizes xenon difluoride (XeF2) gas, which provides extremely high selectivity of silicon to common masking materials such as photoresist, silicon dioxide (SiO2), silicon nitride (Si3N4), and aluminum. This system is particularly well-suited for Micro Electromechanical Systems (MEMS) applications, including the release of MEMS structures, due to its ability to etch silicon isotropically without the need for liquid chemicals. Beyond silicon, it can also etch other materials like molybdenum (Mo), germanium (Ge), niobium (Nb), polysilicon, titanium (Ti), and tungsten (W). The system can process small samples up to 150mm wafers, and its transparent chamber lid allows for real-time monitoring of the etching progress.

Faculty of Science
Research lab focused on advancing scientific knowledge and innovation.
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