
The Hitachi IM-3000 is a broad ion beam milling system designed for the flat milling of pre-polished samples, particularly effective for metals and alloys prior to ECCI (Electron Channeling Contrast Imaging) analysis. It utilizes a 1 to 6 keV Ar+ ion beam, ensuring limited ion implantation while providing a high sputtering rate. The system produces smooth and flat surfaces with roughness values typically less than 0.2 nm Ra. It is capable of processing a wide range of materials including metals, semiconductors, ceramics, and insulators. Key features include variable beam inclinations to access difficult-to-reach surfaces, high acceleration speeds for rapid material removal, minimized thermal damage, and an in-situ imaging unit for real-time monitoring. The computer-controlled base station allows for accurate beam sweeping and oscillation, making precision surface preparation efficient and simple. The ion beam current ranges from 50 to 100 µA depending on the accelerating voltage, and the tilt angle is adjustable from 0 to 88 degrees.

Faculty of Engineering
Research lab focused on advancing scientific knowledge and innovation.
The Hitachi IM-3000 is a broad ion beam milling system designed for the flat milling of pre-polished samples, particularly effective for metals and alloys prior to ECCI (Electron Channeling Contrast Imaging) analysis. It utilizes a 1 to 6 keV Ar+ ion beam, ensuring limited ion implantation while providing a high sputtering rate. The system produces smooth and flat surfaces with roughness values typically less than 0.2 nm Ra. It is capable of processing a wide range of materials including metals, semiconductors, ceramics, and insulators. Key features include variable beam inclinations to access difficult-to-reach surfaces, high acceleration speeds for rapid material removal, minimized thermal damage, and an in-situ imaging unit for real-time monitoring. The computer-controlled base station allows for accurate beam sweeping and oscillation, making precision surface preparation efficient and simple. The ion beam current ranges from 50 to 100 µA depending on the accelerating voltage, and the tilt angle is adjustable from 0 to 88 degrees.


Faculty of Engineering
Research lab focused on advancing scientific knowledge and innovation.
Discover more resources that could support your research