The KOH/TMAH Wet Etching Bench is specifically configured for anisotropic wet etching of silicon using potassium hydroxide (KOH) or tetramethylammonium hydroxide (TMAH) solutions. These alkaline etchants preferentially attack silicon along specific crystallographic planes (e.g., <100>), enabling the creation of precise, V-shaped grooves, trenches, and other complex three-dimensional microstructures. This process is fundamental for Micro Electromechanical Systems (MEMS) fabrication, allowing for the realization of features such as diaphragms, cantilevers, and intricate patterns with controlled sidewall angles. The etching rate and resulting morphology are highly dependent on factors such as etchant concentration, temperature, and silicon crystal orientation.